Defects Affecting SiC Power Devices

This program focuses on investigating materials defects that affect the operation of SiC power devices as well as the design and fabrication of novel SiC devices. The materials defects being investigated include both point and extended defects. The emphasis of research into point defects concerns their effect on carrier lifetime and how that lifetime varies over the temperature, doping, and carrier concentration ranges encountered in SiC power devices. Extended defects are investigated by a variety of optical probes including ult...