SiC and GaN Power Devices

The project focuses on developing and characterizing novel SiC and GaN power electronic devices. SiC and GaN power switches have the potential of increasing power converter operation voltage to 10-20kV and increasing the switching frequency by a factor of 10. Current research focuses on characterizing and understanding defects in SiC and GaN materials, the effects that the defects in materials have on SiC and GaN devices performance and reliability, investigation of carrier transport in two-dimensional structures, affect of traps...