NRL Wide and Ultra-Wide Bandgap Semiconductor Growth, Integration, and Characterization
NRL seeks research for growing and integrating wide/ultra-wide bandgap semiconductors (III-nitrides, AlN, diamond with GaN) using MOCVD and advanced characterization for power electronics.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: Base stipend approximately $99,200/year with $3,000 travel allowance; duration typically 2-3 years.
Summary: Supports postdoctoral research on growth, integration, and characterization of wide and ultra-wide bandgap semiconductors using MOCVD and advanced techniques for power electronics applications.
Key Information: Open to U.S. citizens and permanent residents; relocation and health insurance benefits included; requires contacting Research Adviser prior to application.
Description
This fellowship opportunity at the Naval Research Laboratory (NRL) focuses on advancing the next generation of power electronics through research on wide and ultra-wide bandgap semiconductors. The program emphasizes:
- Growth of ultra-wide bandgap III-nitride semiconductors.
- Integration of ultra-wide bandgap materials such as Aluminum Nitride (AlN) and diamond with Gallium Nitride (GaN).
- Fundamental studies on how growth processes affect doping, interfaces, and defects.
The primary growth method is metal organic chemical vapor deposition (MOCVD), supplemented by pulsed growth processes and advanced, tailored characterization techniques. Research outcomes are expected to contribute to the understanding and practical application of these semiconductors in power electronics.
Keywords include semiconductors, GaN, AlN, diamond, Ga2O3, growth, epitaxy, MOCVD, and interfaces.
