Description

This fellowship opportunity is offered by the NRC Research Associateship Programs at the Naval Research Laboratory (NRL) in Washington, DC, within the Electronics Science & Technology Division. It targets postdoctoral researchers specializing in atomic layer deposition (ALD), a critical technique for depositing uniform, conformal thin film oxides and other materials essential for emerging neuromorphic and photonic applications.

The research focus includes ALD-grown Mott-transition oxides such as vanadium oxide and niobium oxide, as well as ternary oxide compounds. These materials are studied to achieve tunable properties that support the development of integrated nanoscale electronic and optical devices.

Candidates should have extensive experience with ALD and a strong materials science background, particularly in analyzing and characterizing electronic thin films. The work involves using a dedicated ALD system, device fabrication techniques (including lithography and reactive ion etching), and advanced materials characterization tools such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), atomic force microscopy (AFM), and scanning electron microscopy (SEM). Facilities are available both within the division and at the NRL Nanoscience Institute.