NIST grant supports research on polymer thin films for advanced manufacturing, focusing on structure, composition, and characterization methods.
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | May 1, 2025 | August 1, 2025 | November 1, 2025
Funding Amounts: Base stipend approximately $82,764/year with $3,000 travel allowance; typical appointment duration 2 years.
Summary: Supports postdoctoral research on polymer thin films at NIST, focusing on structure, composition, and advanced characterization methods for applications in manufacturing and separation technologies.
Key Information: Open to U.S. citizens with a Ph.D. earned within the last 5 years; requires contacting a NIST research adviser prior to application; NIST participates in February and August review cycles only.
This fellowship opportunity, offered through the NRC Research Associateship Programs at the National Institute of Standards and Technology (NIST), supports postdoctoral research focused on polymer thin films. These films are critical components in advanced manufacturing and separation technologies, with potential applications including new lithographic techniques, enhanced membrane efficiency, and improved sensor detection limits.
Research projects emphasize understanding and controlling the structure-property relationships of polymer thin films, particularly near interfaces where variations in structure or chemistry can significantly affect performance. The program encourages development of novel characterization methods suitable for limited sample volumes, such as soft X-ray scattering and reflectivity techniques, and integration of experimental scattering data with computational simulations.
Specific research areas include:
The fellowship provides access to NIST’s state-of-the-art facilities and expert mentorship, enabling fellows to contribute to cutting-edge materials science research with practical implications for manufacturing and sensor technologies.