NRL Ultra-wide bandgap semiconductor devices and materials
NRL seeks research into ultra-wide bandgap semiconductors, focusing on material properties, device fabrication (diodes, transistors), and advanced characterization techniques.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (NRL opportunity)
Funding Amounts: $99,200 stipend plus $3,000 travel allowance; relocation assistance available for eligible awardees. Typical tenure 2-3 years.
Summary: Postdoctoral fellowship at Naval Research Laboratory focused on research in ultra-wide bandgap (>4.5 eV) semiconductor materials and devices, including characterization and fabrication of diodes, transistors, and related electronics.
Key Information: Open to U.S. citizens and permanent residents holding a doctoral degree within the last 5 years; requires contacting a research adviser prior to application.
Description
This fellowship opportunity at the Naval Research Laboratory (NRL) supports research in the emerging field of ultra-wide bandgap (UWBG) semiconductor devices and materials, specifically those with bandgaps greater than 4.5 eV. The research focuses on the growth, characterization, and fabrication of power electronic devices such as diodes and transistors using UWBG materials like Gallium Oxide (Ga2O3), III-Oxides, III-Nitrides, and diamond.
Key research areas include:
- Fundamental understanding of material properties such as doping, defects, and conductivity.
- Development and tailoring of advanced characterization techniques for UWBG semiconductors.
- Fabrication and testing of electronic devices integrating these materials for high voltage and high power applications.
Awardees will conduct research within the Electronics Science & Technology Division at NRL in Washington, DC, under the mentorship of experienced advisers.
