Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: Base stipend approximately $95,000 plus $5,000 travel allowance; supplements based on experience; typical tenure 2-3 years.
Summary: Supports postdoctoral and senior researchers in integrating electronic-grade dielectrics into high-power GaN-based RF transistors to improve device performance by minimizing defects.
Key Information: Open to U.S. citizens; requires contacting research adviser prior to application; research conducted at Wright-Patterson AFB, OH in AFRL/RY’s ISO-5 cleanroom.