Single Electron Devices for Quantum Information and Metrology in Silicon
This project aims to create silicon-based qubits and current standards by exploring quantum control limits in single-electron devices using advanced measurements.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | August 1, 2025
Funding Amounts: $82,764 stipend plus $3,000 travel allowance; typical appointment duration 2 years.
Summary: Supports postdoctoral research on silicon-based single electron devices for quantum information and metrology at NIST, focusing on quantum control and measurement techniques.
Key Information: Open to U.S. citizens with a doctoral degree; applications require prior contact with research adviser; NIST participates only in February and August review cycles.
Description
This fellowship opportunity supports postdoctoral research at the National Institute of Standards and Technology (NIST) within the Physical Measurement Laboratory, Nanoscale Device Characterization Division. The research focuses on silicon-based single electron devices (SEDs) that enable precise control and measurement of both spin and charge states of individual electrons. These devices have significant applications in quantum information science and electrical current standards, which are critical for redefining the International System of Units (SI).
The project aims to develop viable silicon qubits and an electrical current standard by investigating the fundamental quantum mechanical limits of control and manipulation. Research methods include high-frequency, low-temperature coherent measurements, charge pumping, and defect characterization in both quantum dot-based and atomically precise single-atom silicon devices.
Key research themes include quantum information, quantum computing, quantum measurement, and metrology related to the redefinition of SI units.
