Defects Affecting SiC Power Devices
This grant studies defects in SiC power devices, develops ways to reduce them, and explores new SiC device designs using novel materials.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | May 1, 2025 | August 1, 2025 | November 1, 2025
Funding Amounts: Base stipend approximately $99,200/year with $3,000 travel allowance; duration typically 2-3 years.
Summary: Supports postdoctoral research investigating materials defects in SiC power devices and development of novel SiC device designs at the Naval Research Laboratory.
Key Information: Open to U.S. citizens and permanent residents; requires Ph.D. earned within last 5 years; relocation and health insurance benefits included.
Description
This fellowship opportunity supports research focused on understanding and mitigating materials defects that impact the performance of silicon carbide (SiC) power devices. The research encompasses both point defects—examining their influence on carrier lifetime across temperature, doping, and carrier concentration ranges—and extended defects, which are studied using advanced optical techniques such as ultraviolet photoluminescence (UVPL) imaging. This unique, non-destructive method enables whole-wafer tracking of dislocations and other extended defects through the full thickness of SiC epitaxial layers.
A key research goal is to develop growth techniques that suppress basal plane dislocations, which cause forward voltage drift due to faulting. Additionally, the program encourages fabrication of novel SiC devices, particularly exploring hetero interfaces like 3C/4H polytype interfaces and graphene on 4H SiC substrates.
The fellowship is hosted at the Naval Research Laboratory (NRL) in Washington, DC, within the Electronics Science & Technology Division.
