Nanoscale Characterization of Photovoltaic Materials and Devices
This grant focuses on developing new methods to analyze next-generation solar panel materials at the nanoscale to improve their efficiency and lower costs.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | August 1, 2025
Funding Amounts: Stipend approximately $82,764 per year plus $3,000 travel allowance; typical appointment duration 2 years.
Summary: Fellowship supporting postdoctoral research on nanoscale characterization of next-generation photovoltaic materials and devices to improve solar power efficiency and reduce costs.
Key Information: Open to U.S. citizens with a doctoral degree earned within the last 5 years; research conducted onsite at NIST in Gaithersburg, MD; requires contacting a Research Adviser prior to application.
Description
This fellowship opportunity supports postdoctoral researchers in developing advanced measurement techniques to characterize next-generation photovoltaic (PV) materials and devices at the nanoscale. The goal is to enable large-scale solar power generation by improving the efficiency-to-cost ratio beyond current silicon-based solar panels.
The research focuses on second generation thin-film PV devices, which are becoming competitive but still face technical challenges, and third generation devices that utilize nanoscale three-dimensional (3D) structures to achieve higher efficiencies at affordable manufacturing costs. However, these third generation devices currently lag behind commercial solar panels in efficiency.
Key challenges addressed include characterizing 3D morphology, transport properties, and interfacial electronic behavior in PV materials and devices. The fellowship supports the development and application of complementary nanoscale characterization methods such as photoconductive atomic force microscopy (AFM), near-field optical microscopy, photothermal scanning spectroscopy, electron beam induced current, cathodoluminescence, and nanopatterning combined with cross-sectioning of samples and contacts.
The research is conducted at the National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division, located in Gaithersburg, Maryland.
