Semiconductor Growth, Characterization and Modeling for Advanced, Infrared Imaging Application
This project explores HgCdTe semiconductor growth using MBE for advanced infrared imaging, aiming to improve detector performance, reduce defects, and enable new functionalities.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Application Deadline)
Funding Amounts: $75,000 base stipend plus $2,000 travel allowance; stipend increases with experience; typical fellowship duration 2-3 years.
Summary: Postdoctoral fellowship opportunity to conduct advanced research on HgCdTe semiconductor growth via molecular beam epitaxy for next-generation infrared imaging applications.
Key Information: Open to U.S. citizens with a PhD earned within the last 5 years; includes relocation and health insurance benefits; requires contacting research adviser prior to applying.
Description
This fellowship opportunity supports postdoctoral research focused on the growth, characterization, and modeling of HgCdTe semiconductors for advanced infrared (IR) imaging applications. HgCdTe is a compound semiconductor with a tunable narrow band-gap, making it ideal for fabricating IR photodetectors with varied spectral responses. The research aims to advance military IR sensor technology by improving sensitivity, resolution, and adding new functionalities and imaging modes.
Molecular beam epitaxy (MBE) is the preferred technique for growing HgCdTe and related materials, offering precise control over alloy composition, bandgap, strain, doping, and growth rate. This control enables the development of complex, high-performance IR detectors.
Fellows will have full access and training on an MBE chamber optimized for II-VI semiconductor growth, capable of handling diverse source and substrate materials. They will also have access to extensive in-house and offsite characterization tools such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Additionally, an in-house diode processing and testing lab is available for fabricating novel photovoltaic diode test structures.
Research challenges include mitigating performance-limiting defects in HgCdTe, developing very low doped non-equilibrium structures for high-temperature operation, creating multilayer junctions for multicolor devices, and heteroepitaxy of HgCdTe on low-cost, large-area substrates like silicon, germanium, and gallium arsenide.
