Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | May 1, 2025 | August 1, 2025 | November 1, 2025
Funding Amounts: Stipend approximately $99,200 per year plus $3,000 travel allowance; typical tenure 2-3 years.
Summary: Postdoctoral fellowship to study point and extended defects in wide bandgap semiconductors using advanced optical and structural characterization techniques.
Key Information: Open to U.S. citizens and permanent residents; requires Ph.D. earned within last 5 years; relocation and health insurance benefits included.
Description
This fellowship opportunity supports research on the optical and structural properties of wide bandgap semiconductors, focusing on point defects, intentional and unintentional doping, and extended defects in bulk and epitaxial layers. Materials of interest include GaN, AlN, AlxGa1-xN, SiC (3C, 4H, 6H polytypes), ZnO, ZnSe, ZnS, BN, and diamond.
The research employs a variety of defect-sensitive and optical characterization techniques such as:
- Raman scattering
- Photoluminescence (PL), including time-resolved and PL-excitation
- Ultraviolet-visible-infrared absorption
- Cathodoluminescence (CL) and CL-imaging
- Electro-luminescence
- Photo-induced current measurements
- PL-imaging
- Scanning electron microscopy and secondary electron imaging
Facilities include variable temperature dewars for macroscopic and microscopic optical studies, and access to a large selection of single crystal bulk materials, films, and device structures.
The goal is to develop a fundamental understanding of how defects influence the structural, optical, and electronic properties of these technologically important semiconductor materials.
