NIST is developing better ways to measure heat and electricity flow in materials for semiconductors and energy tech to improve performance and reliability.
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | May 1, 2025 | August 1, 2025
Funding Amounts: $82,764 base stipend plus $3,000 travel allowance; typical appointment duration 2 years.
Summary: Postdoctoral fellowship at NIST to develop advanced thermal and electrical transport measurement methods for semiconductor and energy materials to enhance device performance and reliability.
Key Information: Open to U.S. citizens with a doctoral degree; applications require prior contact with research adviser; NIST participates in February and August review cycles only.
This fellowship opportunity at the National Institute of Standards and Technology (NIST) focuses on developing critical thermal and electrical transport measurement methods, instrumentation, and reference materials. The research supports the advancement, performance, and reliability of bulk and thin film materials used in semiconductor microelectronics and energy conversion applications such as inverters, AC/DC-DC converters, solid-state lighting, RF, and communication devices.
Thermal management is a key challenge in microprocessors and wide bandgap semiconductor devices, where increasing power density and device complexity have outpaced existing measurement techniques and reliable thermal property data. NIST employs thermoreflectance-based optical measurement techniques that are non-contact, non-destructive, and spatially resolved, enabling unique in-situ characterization of bulk, thin film, embedded, and multilayer material structures—measurements difficult or impossible with traditional methods.
The fellowship offers opportunities to:
Semiconductors, microelectronics, thermoreflectance, FDTR, TDTR, SSTR, pump-probe, energy conversion, thermoelectric, transport properties.