This project will use advanced microscopy to study the atomic structure of next-gen semiconductors like AlN and Ga2O3 for high-power radio frequency applications.
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 | August 1, 2025 | November 1, 2025 | February 1, 2026
Funding Amounts: $99,200 stipend plus $3,000 travel allowance; relocation assistance available; typical fellowship duration 2-3 years.
Summary: Postdoctoral fellowship to conduct nanoscale characterization of ultra-wide bandgap nitride semiconductor materials and devices using advanced electron microscopy at the U.S. Naval Research Laboratory.
Key Information: Open to U.S. citizens and permanent residents with a Ph.D. earned within the last 5 years; requires contacting the research adviser prior to application.
This postdoctoral fellowship opportunity at the U.S. Naval Research Laboratory (NRL) focuses on the nanoscale characterization of advanced nitride materials and devices, specifically ultra-wide bandgap semiconductors such as aluminum nitride (AlN), gallium oxide (Ga2O3), diamond, and cubic boron nitride (BN). These materials are promising candidates for next-generation high power, high efficiency radio frequency applications.
The research primarily involves using aberration-corrected scanning-transmission electron microscopy (STEM) to analyze the atomic structure, phases, interfaces, and defect microstructure of epitaxial heterostructures, starting from bulk materials and thin films. The project utilizes state-of-the-art instrumentation including:
This fellowship offers a unique opportunity to work with cutting-edge microscopy tools to advance understanding of functional materials critical to future electronics.