Antimonide Based Infrared Detectors
Develop antimonide infrared detectors with improved performance, reduced cost, and better uniformity by addressing challenges in materials, processing, and interfaces.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: $75,000 base stipend plus $2,000 travel allowance; stipend increases with postdoctoral experience; typical award duration 2-3 years.
Summary: Fellowship opportunity for postdoctoral researchers to develop advanced antimonide-based infrared detectors addressing materials, processing, and interface challenges for next-generation infrared imaging systems.
Key Information: Open to U.S. citizens with a PhD earned within the last 5 years; research conducted onsite at U.S. Army RDEC/NVESD in Fort Belvoir, VA; relocation and health insurance benefits included.
Description
This fellowship opportunity supports postdoctoral researchers aiming to contribute to the development of next-generation infrared imaging sensors based on group III-antimonide materials. Recent advances have been made in engineered materials such as type II strain layer superlattices, bulk InAsxSb(1-x), and novel heterostructure device designs like the nBn architecture. These antimonide-based infrared detectors promise enhanced performance for long wavelength and dual-band infrared detection, along with reductions in cost, size, weight, and power consumption.
The program focuses on overcoming key challenges before these materials can be fully integrated into imaging systems. Specific research topics of interest include:
- Investigating surface and interface chemistry of antimonide materials to understand and mitigate current leakage pathways.
- Developing new inductively coupled plasma mesa delineation and device processing techniques to enable higher density focal plane arrays with improved uniformity.
- Conducting fundamental studies on molecular beam epitaxy growth of III-V materials and hetero-interfaces to reduce defects and enhance material performance.
The research is hosted at the U.S. Army Research, Development & Engineering Command, Night Vision/Electronic Sensors Directorate (RDEC/NVESD) located in Fort Belvoir, VA.
