This grant funds research using advanced microscopy and nonlinear optics to study defects and properties of wide-bandgap semiconductor nanowires.
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | August 1, 2025
Funding Amounts: Approximately $82,764 stipend for a two-year postdoctoral fellowship.
Summary: Supports postdoctoral research using advanced microscopy and nonlinear optics to study defects and properties of wide-bandgap semiconductor nanowires at NIST.
Key Information: Open to U.S. citizens with a Ph.D. earned within the last 5 years; research conducted on-site at NIST; requires contacting a Research Adviser prior to applying.
This fellowship opportunity is part of the NRC Research Associateship Programs (RAP) hosted at the National Institute of Standards and Technology (NIST). It supports postdoctoral researchers in conducting advanced characterization of wide-bandgap mesoscopic materials, specifically III-nitride alloy semiconductors and quantum-confined heterostructures in nanowires. The research focuses on developing and applying nanoscopic multiphoton spectroscopy and nonlinear optical techniques such as continuous wave (CW) and ultrafast nonlinear optics, UV second-harmonic generation, and multiphoton UV spectroscopy using scanning near-field optical microscopy (NSOM) and confocal microscopy.
Key research themes include studying local defects, polytypism, inversion domains, alloy segregation, nanoscale strain, and piezoelectric effects on the optical properties of semiconductor nanowires. This program offers access to state-of-the-art facilities and mentorship from leading scientists at NIST, aiming to advance understanding of semiconductor materials critical for optoelectronic applications.