Develop and use atomic layer deposition to create thin films for new optoelectronic devices, focusing on oxides, quantum dots, and metamaterials.
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: Base stipend approximately $99,200/year with $3,000 travel allowance; duration typically 2-3 years.
Summary: Postdoctoral fellowship to develop and utilize atomic layer deposition (ALD) thin films for novel optoelectronic devices, focusing on oxides, quantum dots, and metamaterials.
Key Information: Open to U.S. citizens and permanent residents; requires Ph.D. earned within last 5 years; research conducted at Naval Research Laboratory in Washington, DC.
This fellowship opportunity supports postdoctoral researchers in the development and application of thin films deposited by atomic layer deposition (ALD) for innovative optoelectronic devices and applications. Research topics of interest include:
Ideal candidates will have experience with ALD techniques and the analysis and characterization of optoelectronic thin films using methods such as X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning and transmission electron microscopy (SEM, TEM), photoluminescence, and ellipsometry.
The research will be conducted at the Naval Research Laboratory (NRL) in Washington, DC, specifically within the Electronics Science & Technology Division. Facilities include a class 100 cleanroom and a dedicated KJLC ALD150LX system with an integrated glove box, housed in the Institute for Nanoscience.