Atomic Layer Deposition of Electronic Thin Films
Seeking an expert in atomic layer deposition (ALD) to develop high-quality thin films for electronics, focusing on novel materials and integration for advanced applications.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 | August 1, 2025 | November 1, 2025 | February 1, 2026
Funding Amounts: $99,200 stipend plus $3,000 travel allowance; relocation assistance available for moves over 50 miles; health insurance offered.
Summary: Postdoctoral fellowship to develop novel atomic layer deposition methods for high-quality epitaxial electronic thin films at low temperatures, enabling advanced materials integration and device applications.
Key Information: Open to U.S. citizens and permanent residents holding a doctoral degree; requires expertise in ALD and thin film deposition; research conducted at Naval Research Laboratory in Washington, DC.
Description
This fellowship opportunity at the Naval Research Laboratory (NRL) focuses on advancing atomic layer deposition (ALD) techniques to produce conformal, high-quality epitaxial thin films at low processing temperatures. The goal is to overcome traditional deposition limitations, enabling access to new phase diagram regions and integration of dissimilar materials for heterostructures with enhanced functionality and flexibility.
Key research areas include:
- Tailoring phase change materials for active modulation and control of visible and infrared signals.
- Integrating metastable wide- and ultrawide-bandgap semiconductors to create novel RF heterojunctions.
- Achieving epitaxial, electronic-grade thin films on flexible and temperature-sensitive substrates.
- Controlling superconducting material properties, especially when integrated with semiconductors for quantum applications.
Candidates will conduct experiments to investigate structure-property relationships of ALD thin films, maintain vacuum deposition systems, and contribute to the design and construction of new tooling to understand and modify atomic layer processes for epitaxial growth at low temperatures. Collaboration with the Plasma Physics Division is expected.
Proficiency in data processing and programming software (e.g., Excel, Origin, LabVIEW) and materials characterization techniques (AFM, SEM, XRD, C-V, I-V, Hall measurements) is highly advantageous.
