Electronic-grade dielectric integration for high-power, high frequency electronic devices
This research aims to improve the performance of high-power, high-frequency GaN transistors by integrating dielectrics with minimal defects during manufacturing.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: Base stipend approximately $95,000 plus $5,000 travel allowance; supplements based on experience; typical tenure 2-3 years.
Summary: Supports postdoctoral and senior researchers in integrating electronic-grade dielectrics into high-power GaN-based RF transistors to improve device performance by minimizing defects.
Key Information: Open to U.S. citizens; requires contacting research adviser prior to application; research conducted at Wright-Patterson AFB, OH in AFRL/RY’s ISO-5 cleanroom.
Description
This fellowship opportunity, offered through the NRC Research Associateship Programs in partnership with the Air Force Science and Technology Fellowship Program (AF STFP), focuses on advancing the integration of electronic-grade dielectrics into high-power, high-frequency GaN-based RF transistors. Dielectrics are critical components in transistor operation, serving as gate insulators in MOSFETs and passivation layers in MESFETs and HEMTs. However, defects in the bulk or at the dielectric/semiconductor interface significantly degrade transistor performance.
The research aims to optimize process parameters during device fabrication to achieve negligible defect densities in dielectrics integrated with wide bandgap (WBG) materials such as III-V (GaAs, GaN, AlGaN) and III-O (Ga2O3, AlGaO) semiconductors. These materials lack a native dielectric layer, unlike silicon, leading to long-standing challenges in interface quality and device stability.
The project will be conducted in AFRL/RY’s class 100 (ISO-5) cleanroom at Wright-Patterson Air Force Base, Ohio, and will involve extensive electrical, optical, and materials characterization techniques to evaluate device performance and the impact of fabrication parameters. The ultimate goal is to generate novel knowledge enabling the application of WBG materials that meet the stringent requirements of the U.S. Air Force and Space Force for high-power RF electronics.
