NRL seeks to use electron microscopy to study the atomic structure of ultra-wide bandgap semiconductors grown in-house for high-power electronics.
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: $99,200 stipend plus $3,000 travel allowance; relocation and health insurance benefits included.
Summary: Postdoctoral fellowship to conduct advanced electron microscopy studies on ultra-wide bandgap semiconductors grown at the Naval Research Laboratory for high-power and high-efficiency electronics.
Key Information: Open to U.S. citizens and permanent residents holding a recent doctoral degree; requires contacting the research adviser prior to application.
This fellowship opportunity at the Naval Research Laboratory (NRL) focuses on the nanoscale characterization of ultra-wide bandgap semiconductors such as AlN, Ga2O3, diamond, and cubic boron nitride (BN). These materials are promising candidates for next-generation high-power and high-efficiency radio frequency applications. The research aims to understand and develop the atomic structure of these materials to enable their use in replacing existing semiconductor technologies.
NRL provides state-of-the-art facilities including molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) reactors for material growth, and advanced electron microscopy tools for characterization. Techniques available include electron energy-loss spectroscopy (EELS), 4D scanning transmission electron microscopy (4D-STEM), high-resolution imaging, and sophisticated data analysis using Python.
The research will focus on detailed nanoscale analysis of phases, interfaces, and defect microstructures in epitaxial heterostructures grown at NRL. Applicants with experience or interest in advanced electron microscopy methods and data analysis are ideal candidates.