III-Nitride Power Electronic Devices
This grant focuses on improving GaN and AlGaN power devices by studying and reducing defects caused by ion implantation during manufacturing.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Naval Research Laboratory NRL)
Funding Amounts: $99,200 stipend plus $3,000 travel allowance; typical fellowship duration 2-3 years.
Summary: Supports postdoctoral research on advanced processing, characterization, and modeling of GaN and AlGaN power electronic devices to analyze and mitigate ion implantation defects.
Key Information: Open to U.S. citizens and permanent residents; relocation and health insurance benefits included; requires contacting research adviser prior to application.
Description
This fellowship opportunity at the Naval Research Laboratory (NRL) focuses on research to improve III-nitride (GaN and AlGaN) vertical power electronic devices. The research aims to develop controlled selective area doping techniques using ion implantation and activation annealing for applications such as contact regions, JFET plug regions, and edge termination regions. A critical aspect of the work is to analyze and mitigate defects caused by ion implantation, which can degrade carrier mobility, compensate doping, and cause transient trapping phenomena. The research involves advanced processing, detailed characterization, and computational modeling of GaN and AlGaN materials and devices.
The program is part of the NRC Research Associateship Programs, which provide postdoctoral scientists and engineers with opportunities to conduct self-directed research aligned with federal laboratory goals, gain mentorship, and access state-of-the-art facilities.
