NIST Power Electronics Performance and Reliability
NIST grant seeks to improve the reliability of wide bandgap power devices using physics-based electrical measurements for industry use.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: February 1, 2025 | May 1, 2025 (closed) | August 1, 2025
Funding Amounts: $82,764 stipend plus $3,000 travel allowance; typical appointment duration 2 years.
Summary: Postdoctoral fellowship at NIST focused on improving reliability of wide bandgap power devices through physics-based electrical measurement methods for industry application.
Key Information: Open to U.S. citizens with a Ph.D. earned within the last 5 years; applications require prior contact with Research Adviser; NIST participates only in February and August review cycles.
Description
This fellowship opportunity at the National Institute of Standards and Technology (NIST) supports postdoctoral research aimed at enhancing the performance and reliability of wide bandgap power devices, such as SiC, GaN, and Ga2O3. These devices are critical to transforming the U.S. energy landscape but face significant reliability challenges that must be overcome for widespread adoption in power applications where failure is unacceptable.
The research focuses on understanding the physics underlying device reliability and developing physics-based electrical measurement techniques. These methods are intended to be practical tools that industry can adopt and trust, ultimately improving device reliability and customer confidence.
The fellowship is hosted within NIST's Physical Measurement Laboratory, Nanoscale Device Characterization Division, located in Gaithersburg, MD.
Keywords
Power device, Defect, Wide bandgap, SiC, GaN, Ga2O3, Electrical characterization, Reliability
