Description

This fellowship opportunity, offered through the NRC Research Associateship Programs at the National Institute of Standards and Technology (NIST), supports postdoctoral researchers working on precision materials for quantum devices. The research focuses on fabricating and characterizing quantum devices such as tunnel junctions, single electron transistors, and superconducting resonators using ultra-high vacuum metal deposition and in situ low energy plasma processing. These devices are measured at cryogenic temperatures and serve as precursors to more complex hybrid quantum devices incorporating metal-oxide-semiconductor (MOS) qubits.

A key emphasis is on devices utilizing aluminum oxides (AlOx) formed in ultraclean environments with plasma oxidation, which exhibit reduced defect densities promising for quantum applications. The research aims to develop simplified semiconductor qubits as diagnostics or benchmarks to refine materials and device designs, informing the development of advanced quantum processing devices. Additionally, the program explores novel coupling schemes between qubit paradigms, including MOS-dopant, MOS-superconducting, and MOS-optical coupling.

Keywords associated with this research include transport measurements, spin decoherence, isotopic enrichment, quantum devices, MOS technology, hybrid quantum devices, solid state quantum computing, quantum information sciences, and cryogenic transport.