SiC and GaN Power Devices
This project aims to improve SiC and GaN power devices by studying material defects, carrier transport, and device physics to boost performance, voltage, and reliability.
This grant is no longer accepting proposals
NRC Research Associateship Programs has archived this opportunity.
Funder: NRC Research Associateship Programs
Due Dates: May 1, 2025 (Next deadline)
Funding Amounts: $99,200 stipend plus $3,000 travel allowance; typical fellowship duration 2-3 years
Summary: Postdoctoral fellowship to conduct research on novel SiC and GaN power electronic devices focusing on material defects, carrier transport, and device physics to enhance performance, voltage, and reliability.
Key Information: Open to U.S. citizens and permanent residents; requires contacting Research Adviser prior to applying; relocation and health insurance benefits included.
Description
This fellowship opportunity at the Naval Research Laboratory (NRL) supports postdoctoral research on silicon carbide (SiC) and gallium nitride (GaN) power electronic devices. The research aims to develop and characterize novel SiC and GaN power switches that can increase power converter operation voltages to 10-20 kV and boost switching frequencies by a factor of 10.
Key research areas include:
- Characterization and understanding of defects in SiC and GaN materials.
- Investigating how these defects affect device performance and reliability.
- Studying carrier transport in two-dimensional semiconductor structures.
- Examining the impact of traps at the semiconductor-dielectric interface on mobility and charge trapping.
- Exploring device physics related to high voltage junction termination regions.
- Developing novel device structures to improve performance, increase operating voltage, and enhance reliability.
This project is ideal for researchers interested in advanced power electronics, semiconductor materials science, and device physics.
